GERMANIUM DOIDES

GERMANIUM DIODES

GERMANIUM DOIDES

GERMANIUM DIODES

GERMANIUM DIODES

Gold Bonded Germanium Diodes in DO-7 Package

GERMANIUM DOIDES

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65 V, 500 mA, gold bonded germanium diode

封装/外壳：32-VFQFN 裸露焊盘 包装：卷带（TR） 描述：RF ATTENUATOR 0.5-31.5DB 32VFQFN RF/IF，射频/中频和 RFID 衰减器

GaAs IC 6 Bit Digital Attenuator with Driver 0.5 dB LSB Positive Control DC? GHz

GaAs IC 6-Bit Digital Attenuator with Driver 0.5 dB LSB Positive Control LF-1 GHz

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GaAs IC 6 Bit Digital Attenuator with Driver 0.5 dB LSB Positive Control DC-1 GHz

文件：397.55 Kbytes Page：3 Pages

GaAs IC 6-Bit Digital Attenuator with Driver 0.5 dB LSB Positive Control LF-1 GHz

文件：135.58 Kbytes Page：4 Pages

封装/外壳：32-VFQFN 裸露焊盘 包装：卷带（TR） 描述：RF ATTENUATOR 0.5-31.5DB 32VFQFN RF/IF，射频/中频和 RFID 衰减器

GaAs IC 6-Bit Digital Attenuator with Driver 0.5 dB LSB Positive Control LF-1 GHz

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages