包装：盒 描述：CO SENSOR 测试与计量 配件

包装：散装 描述：CO SENSOR 测试与计量 配件

4G

一般特性 \n频段：LTE-TDD B34/B38/B39/B40/B41LTE-FDD B1/B3/B5/B8GSM/GPRS/EDGE 900/1800 MHz*支持电压范围：3.4V ~ 4.2V，典型值：3.8V工作温度：-40℃ ~ +85℃尺寸：30.0*30.0*2.5mm重量：4.6±0.1gAT指令操作\n\n软件特性 \n支持Microsoft Windows 7/8/10 USB驱动支持Linux /Android USB驱动支持Android5.0/6.0/7.0/8.0/9.0 RIL支持USB口软件升级，FOTA远程软件升级支持TCP/IP/IPV4/IPV6/Mu;

LTE Cat 4模块

The A7600C-L1 is Multi-Band LTE-TDD/LTE-FDD/HSPA+/GSM /GPRS/EDGE LTE CAT4 module solution in a SMT type which supports LTE CAT4 up to 150Mbps data transfer.\r\n\r\nIt has strong extension capability with rich interfaces including UART,I2C,USB2.0, GPIO etc. The module provides much flexibility and e General Features \n● Supply voltage range: 3.4V ~ 4.2V, Typ: 3.8V\n● Control Via AT Commands\n● Operation temperature: -40℃ to +85℃\n● Dimensions: 30.0*30.0*2.5mm\n● Weight: 4.6g\n● LTE-FDD/LTE-TDD/UMTS/HSDPA/HSUPA/HSPA+/GSM/GPRS/EDGE\n\nOther Features\n● USB2.0\n● UART\n● (U)SIM card (1.8V /3.0V)\n;

LTE CAT4模块

A7600C-PCIEA是一款面向中国市场的LTE CAT4模块，支持LTE-TDD/LTE-FDD/HSPA+/GSM/ GPRS/EDGE等无线通信制式。该产品支持最大下行速率150Mbps和最大上行速率50Mbps。\n\nA7600C-PCIEA采用Mini-PCIE封装形式,具有极强的兼容性。它是由A7600C模块和Mini-PCIE转接板焊接组成。\n\nA7600C-PCIEA内置了多种网络协议，支持多种主流软件操作系统的驱动（Windows，Linux和Android等操作系统主流版本的USB驱动）和软件功能。同时也集成了主流的工业标准接口，具有强大的扩展能力，包括UART，U • 一般特性 \n支持频段：\nTDD-LTE B34/B38/B39/B40/B41\nFDD-LTE B1/B3/B5/B8\nUMTS/HSPA+ B1/B8\nGSM/GPRS/EDGE 900/1800 MHz\n支持电压范围：3.4V ~ 4.2V, 典型值：3.8V\n工作温度：-40℃ ~ +85℃\n尺寸：50.8*31*5.35mm\n重量：TBD\nAT指令操作\n\n\n• 数据传输\nLTE CAT4：上行最大50Mbps,\n下行最大150Mbps\nHSPA+：上行最大5.76Mbps\n下行最大21.6Mbps\nUMTS：上行/下行最大 384Kbps\nED;

WIRING KIT FOR 12VDC SYSTEMS

Illuminated On/Off 20-Amp Rocker Switch Four Terminal 20-Amp Relay 13-ft Blue, White and Black 18AWG Wires 15-Amp Inline Fuse

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature