Sub 1GHz 无线通信芯片

A7169 is a monolithic low-IF architecture CMOS FSK/GFSK TRX for wireless applications in the 315/433/470/868/ 915MHz ISM bands. This device is especially suitable for battery-powered application and the 470MHz ~ 510MHz wireless AMR (Auto Meter Reading) in China and 868.3MHz wireless CTR in Europe. \ Small size (QFN 3X3, 16 pins).\nFrequency band: 315/433/470/510/868/915MHz.\nFSK and GFSK modulation.\nProgrammable data rate from 2Kbps to 500Kbps.\nProgrammable TX power level from -34dBm to 20dBm.\nOn chip regulator, supports input voltage 2.0 ~ 3.6 V.\nDeep sleep current (0.3uA).\nSleep ;

500mA LED PROTECTOR

DESCRIPTION The AMC7169 is a two terminal LED protector with low dropout voltage rated for 500mA bypass current. Low operation current at monitoring mode and high bypass current capability at triggered mode. Build-in reverse diode for bypass reversed supply voltage. The AMC7169 is designed for p

Dual 5.8W Audio Power Amplifier Circuit

■ Overview The AN7169 is an integrated circuit designed for low distortion, low noise and low power dissipation audio set of 5.8W (13.2V, 4Ω) output. Stereo operation is enabled due to incorporating two amplifiers on one chip. 12-pin SIL package enabled compact and high integrated set. Therm

Power Supply for PMT Modules

POWER SUPPLIES FOR PHOTOMULTIPLIER TUBE MODULES The C7169 and C10709 are the power supply units which can be used for various photomultiplier tube (PMT) modules produced by Hamamatsu. These units can provide both the driving voltage and the control voltage.

UHF BAND GaAs POWER AMPLIFIER

DESCRIPTION The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency :

Single-Phase Energy Measurement IC with 8052 MCU, RTC and LCD driver

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