Cascadable Amplifier 2000 to 6000 MHz

Description The A6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF

2000 TO 6000 MHz CASCADABLE AMPLIFIER

2000 TO 6000 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 1.5 dB (TYP.) • MEDIUM OUTPUT POWER: +18 dBm (TYP.) • HIGH EFFICIENCY: 58 mA (TYP.) @ +5 Vdc • PHEMT AMPLIFIER

2000 TO 6000 MHz CASCADABLE AMPLIFIER

Description The A6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF

Cascadable, Low Noise, Low Volt

The A6011 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This single stage GaAs FET feedback amplifier design displays impressive performance characteristics over a broadband frequency range. An RF choke is used ·Low Noise Figure: 1.5 dB (Typ.)\n·Phemt Amplifiers\n·High Efficiency: 58 mA (Typ.) @ +5 Vdc\n·Medium Output Power: +18 dBm (Typ.);

Cascadable Amplifier 2000 to 6000 MHz

文件：374.86 Kbytes Page：2 Pages

封装/外壳：TO-8 形式，4 引线 包装：卷带（TR）剪切带（CT） 描述：AMPLIFIER RF/IF，射频/中频和 RFID 射频放大器

Cascadable Amplifier 2000 to 6000 MHz

文件：637.25 Kbytes Page：3 Pages

Cascadable Amplifier 2000 to 6000 MHz

文件：374.86 Kbytes Page：2 Pages

Cascadable Amplifier 2000 to 6000 MHz

文件：637.25 Kbytes Page：3 Pages

Cascadable Amplifier

文件：1.33694 Mbytes Page：2 Pages

Cascadable Amplifier

文件：1.33694 Mbytes Page：2 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Fast Recovery Rectifier, 40A, 200ns

Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin

High-speed Data Converter

High-speed Data Converter

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free