丝印代码：A2SHB；N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

丝印代码：A2SHB；N-Channel 1.25-W, 2.5-V MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

丝印代码：A2SHB；N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

丝印代码：A2SHB；Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

丝印代码：A2SHB；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

丝印代码：A2SHB；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

丝印代码：A2SHB；N-Channel MOSFET uses advanced trench technology

文件：1.74159 Mbytes Page：5 Pages

丝印代码：A2SHB；N-Channel MOSFET uses advanced trench technology

文件：1.54741 Mbytes Page：3 Pages

丝印代码：A2SHB；N-Channel Enhancement Mode Power MOSFET

文件：503.56 Kbytes Page：7 Pages

丝印代码：A2SHB；N-Channel Enhancement Mode Power MOSFET

文件：886.97 Kbytes Page：7 Pages

丝印代码：A2SHB；20V N-Channel Enhancement Mode MOSFET

文件：2.8405 Mbytes Page：5 Pages

丝印代码：A2SHB；N-Channel Enhancement mode Field Effect Transistor

文件：356.6 Kbytes Page：2 Pages

丝印代码：A2SHB；N-Channel Enhancement MOSFET

文件：451.77 Kbytes Page：2 Pages

N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

Process Sealed Subminiature Toggles

文件：259.13 Kbytes Page：7 Pages

General Specifications

Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w

General Specifications

Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w

General Specifications

Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w

General Specifications

Distinctive Characteristics Subminiature size saves space on PC boards. Specifically developed for logic-level applications. Totally sealed body construction prevents contact contamination and allows time- and money-saving automated soldering and cleaning. Award-winning STC contact mechanism w

Process Sealed Subminiature Toggles

文件：259.13 Kbytes Page：7 Pages