丝印代码：A1701；LINE DRIVER AND RECEIVER

Meets or Exceeds the Requirements of ANSI TIA/EIA-232-C Wide Range of Supply Voltage VCC = ±4.5 V to ±15 V Low Power . . . 117 mW (VCC = ±9 V) Receiver Output TTL Compatible Response Control Provides: – Input Threshold Shifting – Input Noise Filtering description The SN751701 line driv

丝印代码：A1701；LINE DRIVER AND RECEIVER

Meets or Exceeds the Requirements of ANSI TIA/EIA-232-C Wide Range of Supply Voltage VCC = ±4.5 V to ±15 V Low Power . . . 117 mW (VCC = ±9 V) Receiver Output TTL Compatible Response Control Provides: – Input Threshold Shifting – Input Noise Filtering description The SN751701 line driv

丝印代码：A1701；LINE DRIVER AND RECEIVER

Meets or Exceeds the Requirements of ANSI TIA/EIA-232-C Wide Range of Supply Voltage VCC = ±4.5 V to ±15 V Low Power . . . 117 mW (VCC = ±9 V) Receiver Output TTL Compatible Response Control Provides: – Input Threshold Shifting – Input Noise Filtering description The SN751701 line driv

Low-Frequency General-Purpose Amp Applications????

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector-to-emitter saturation voltage. Applications • AF power amplifier, medium-speed switching, small-sized motor driver applications.

VSC system processor IC

The BA1701 is a monolithic audio-compression system controller IC that uses VSC∗. When used in combination with an analog delay circuit and low-pass filter, it can replay recorded audio at 1 to 2.5 times the recording speed, without altering the pitch. Features 1) Wide operating voltage range

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

PHS MULTI-FUNCTION GaAs MMIC

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