Hall Effect Latch / Bipolar Switch

Description The A1250 Hall-effect sensor IC is a temperature stable, stress-resistant bipolar switch. This device is the most sensitive Hall-effect device in the Allegro™ bipolar switch family and is intended for ring-magnet sensing. Superior high-temperature performance is made possible through

Hall Effect Latch / Bipolar Switch

Description The A1250 Hall-effect sensor IC is a temperature stable, stress-resistant bipolar switch. This device is the most sensitive Hall-effect device in the Allegro™ bipolar switch family and is intended for ring-magnet sensing. Superior high-temperature performance is made possible through

Hall Effect Latch / Bipolar Switch

Description The A1250 Hall-effect sensor IC is a temperature stable, stress-resistant bipolar switch. This device is the most sensitive Hall-effect device in the Allegro™ bipolar switch family and is intended for ring-magnet sensing. Superior high-temperature performance is made possible through

Hall-Effect Latch / Bipolar Switch

文件：950.05 Kbytes Page：12 Pages

封装/外壳：SOT-23W 功能：双极开关 包装：散装 描述：MAGNETIC SWITCH BIPOLAR SOT23W 传感器，变送器 磁性传感器 - 开关（固态）

封装/外壳：SOT-23W 功能：双极开关 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MAGNETIC SWITCH BIPOLAR SOT23W 传感器，变送器 磁性传感器 - 开关（固态）

Hall-Effect Latch / Bipolar Switch

文件：950.05 Kbytes Page：12 Pages

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi