丝印代码：A1013；TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS)

Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383.

丝印代码：A1013；TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383.

丝印代码：A1013；Color TV Verttical Deflection Output Applications Power Switching Applications

Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383.

丝印代码：A1013；PNP Epitaxial Silicon Transistor

FEATURES  High BVCEO  High DC current gain  Large continuous collector current capability  Epitaxial planar die construction

丝印代码：A1013；TO-92L Plastic-Encapsulate Transistors

FEATURE High Voltage:VCEO=-160V Large Continuous Collector Current Capability Complementary to 2SC2383

丝印代码：A1013；TO-92L Plastic-Encapsulate Transistors

FEATURE High Voltage:VCEO=-160V Large Continuous Collector Current Capability Complementary to 2SC2383

丝印代码：A1013；Color TV Verttical Deflection Output Applications Power Switching Applications

文件：159.14 Kbytes Page：5 Pages

丝印代码：A1013；PNP Epitaxial Silicon Transistor

文件：323.22 Kbytes Page：8 Pages

丝印代码：A1013；PNP Epitaxial Silicon Transistor

文件：323.22 Kbytes Page：8 Pages

丝印代码：A1013；PNP Epitaxial Silicon Transistor

文件：323.22 Kbytes Page：8 Pages

丝印代码：A1013；PNP Epitaxial Silicon Transistor

文件：323.22 Kbytes Page：8 Pages

Color TV Verttical Deflection Output Applications Power Switching Applications

文件：159.14 Kbytes Page：5 Pages

Silicon PNP Epitaxial Transistor

文件：183.92 Kbytes Page：1 Pages

三极管

PNP Transistor

晶体管类型:PNP\n集电极电流(lc): 1A\n集射极击穿电压 160V\n耗散功率(Pd): 500mW

GPS RADIONOVA짰 Co-planar Antenna

文件：1.47442 Mbytes Page：12 Pages

包装：散装 描述：RF ANT 1.575GHZ PCB TRACE SLD RF/IF，射频/中频和 RFID RF 天线

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.