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2SA1013晶体管资料
2SA1013别名：2SA1013三极管、2SA1013晶体管、2SA1013晶体三极管
2SA1013生产厂家：日本东芝公司
2SA1013制作材料：Si-PNP
2SA1013性质：CTV_低频或音频放大 （LF）_场输出 （VA）
2SA1013封装形式：直插封装
2SA1013极限工作电压：160V
2SA1013最大电流允许值：1A
2SA1013最大工作频率：>15MHZ
2SA1013引脚数：3
2SA1013最大耗散功率：0.9W
2SA1013放大倍数：
2SA1013图片代号：A-12
2SA1013vtest：160
2SA1013htest：15000100
- 2SA1013atest：1
2SA1013wtest：0.9
2SA1013代换 2SA1013用什么型号代替：BF491,MPS-U60,2SA1275,2SB1212,3CA3F,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA1013 | TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS) Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. | TOSHIBA 东芝 |   | |
2SA1013 | PNP Plastic Encapsulated Transistor FEATURE ● High Voltage： VCEO= -160V ● Large Continuous Collector Current Capability ● Complementary to 2SC2383 | SECOS 喜可士 | | |
2SA1013 | isc Silicon PNP Transistor DESCRIPTION • High Voltage and High Current Vceo=-160V(Min.） • Excellent hFE Linearity • Low Noise • Complement to Type 2SC2383 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio frequency general purpose amplifier Applications | ISC 无锡固电 | | |
2SA1013 | TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -1A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SA1013 | PNP Transistors ■ Features ● High voltage ● Large continuous collector current capability | YFWDIODE 佑风微 | | |
2SA1013 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. | TOSHIBA 东芝 | | |
2SA1013 | SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE ● High voltage ● Large continuous collector current capability | JIANGSU 长电科技 | | |
2SA1013 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. | SEMTECH_ELEC 先之科半导体 | | |
2SA1013 | PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | |
2SA1013 | Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURE • High voltage • Large continuous collector current capability | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
2SA1013 | Silicon PNP transistor in a TO-92LM Plastic Package Descriptions Silicon PNP transistor in a TO-92LM Plastic Package. Features High voltage, large continuous collector current capability, Complementary pair with 2SC2383.. Applications Color TV vert. and class B sound output applications. | FOSHAN 蓝箭电子 | | |
2SA1013 | Color TV Verttical Deflection Output Applications Power Switching Applications Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. | TOSHIBA 东芝 | | |
2SA1013 | TRANSISTOR (PNP) FEATURE • High voltage:VCEO=-160V • Large continuous collector current capability • Complementary to 2SC2383 | KOOCHIN 灏展电子 | | |
2SA1013 | PNP Epitaxial Silicon Transistor FEATURES High BVCEO High DC current gain Large continuous collector current capability Epitaxial planar die construction | LUGUANG 鲁光电子 | | |
2SA1013 | TO-92L Plastic-Encapsulate Transistors FEATURE High Voltage:VCEO=-160V Large Continuous Collector Current Capability Complementary to 2SC2383 | DGNJDZ 南晶电子 | | |
2SA1013 | SOT-89-3L Plastic-Encapsulate Transistors 文件：1.47659 Mbytes Page：4 Pages | DGNJDZ 南晶电子 | | |
2SA1013 | PNP TO-92L Plastic-Encapsulate Transistors | LXWIC 力芯微电子 | | |
2SA1013 | 160V1A,General Purpose PNP Bipolar Transistor | GALAXY 银河微电 | | |
2SA1013 | Bipolar Transistor | UTC 友顺 | | |
2SA1013 | Color TV Verttical Deflection Output Applications Power Switching Applications 文件：159.14 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
2SA1013 | TO 92MOD PLASTIC ENCAPSULATE TRANSISTORS 文件：1.10442 Mbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
TO-92L Plastic-Encapsulate Transistors FEATURE High Voltage:VCEO=-160V Large Continuous Collector Current Capability Complementary to 2SC2383 | DGNJDZ 南晶电子 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc. FEATURES * High BVCEO * Hi | UTC 友顺 | | ||
Color TV Verttical Deflection Output Applications Power Switching Applications Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. | TOSHIBA 东芝 | | ||
PNP Epitaxial Silicon Transistor Features • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage -160V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets | MCC | | ||
PNP Transistors ■ Features ● High voltage ● Large continuous collector current capability | YFWDIODE 佑风微 | | ||
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Color TV Verttical Deflection Output Applications Power Switching Applications • High voltage: VCEO = −160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TV. • Complementary to 2SC2383. | TOSHIBA 东芝 | | ||
PNP Transistors ■ Features ● High voltage ● Large continuous collector current capability | YFWDIODE 佑风微 | | ||
PNP Epitaxial Silicon Transistor Features • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage -160V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets | MCC | | ||
Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High voltage, large continuous collector current capability, Complementary pair with 2SC2383T. Applications Color TV vert.and class B sound output applications. | FOSHAN 蓝箭电子 | | ||
TO-92L Plastic-Encapsulate Transistors FEATURE High Voltage:VCEO=-160V Large Continuous Collector Current Capability Complementary to 2SC2383 | DGNJDZ 南晶电子 | | ||
PNP Epitaxial Silicon Transistor Features • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage -160V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets | MCC | | ||
PNP Transistors ■ Features ● High voltage ● Large continuous collector current capability | YFWDIODE 佑风微 | | ||
Color TV Verttical Deflection Output Applications Power Switching Applications 文件：159.14 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
PNP Transistors 文件：336.66 Kbytes Page：1 Pages | KEXIN 科信电子 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP EPITAXIAL SILICON TRANSISTOR 文件：140.65 Kbytes Page：3 Pages | UTC 友顺 | | ||
PNP Epitaxial Silicon Transistor 文件：337.81 Kbytes Page：2 Pages | MCC | | ||
PNP Transistors 文件：336.66 Kbytes Page：1 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS PNP 160V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC | | ||
封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS PNP 160V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MCC | | ||
PNP Epitaxial Silicon Transistor 文件：337.81 Kbytes Page：2 Pages | MCC | | ||
PNP Transistors 文件：336.66 Kbytes Page：1 Pages | KEXIN 科信电子 | |
2SA1013产品属性
- 类型
描述
- 型号
2SA1013
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
Color TV Verttical Deflection Output Applications Power Switching Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
长电/长晶 |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
TOSHIBA |
24+ |
TO-92 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
TOSHIBA |
2511 |
TO-92 |
12800 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
TOSHIBA/东芝 |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
TOSHIBA |
23+ |
TO-92 |
12700 |
买原装认准中赛美 |
|||
CJ |
23+ |
SOT-89 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
06+ |
TO92L |
2000 |
原装 |
|||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TOSHIBA |
23+ |
TO-92 |
12800 |
正规渠道,只有原装! |
2SA1013规格书下载地址
2SA1013参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
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- 4066
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- 3579
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- 2sc4226
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- 2SA1037
- 2SA1036
- 2SA1035
- 2SA1034
- 2SA1032
- 2SA1031
- 2SA1030
- 2SA103
- 2SA1029
- 2SA1028
- 2SA1027
- 2SA1026
- 2SA1025
- 2SA1024
- 2SA1023
- 2SA1022
- 2SA1021
- 2SA1020
- 2SA102
- 2SA1019
- 2SA1018
- 2SA1017
- 2SA1016K
- 2SA1016
- 2SA1015LT1
- 2SA1015
- 2SA1014
- 2SA1012
- 2SA1011
- 2SA1010
- 2SA101
- 2SA1009A
- 2SA1009
- 2SA1008
- 2SA1007(A)
- 2SA1007
- 2SA1006B
- 2SA1006A
- 2SA1006
- 2SA1005
- 2SA1004
- 2SA1003
- 2SA1002
- 2SA1001
- 2SA100
- 2SA-10
- 2SA0963
- 2SA0921
- 2SA0914
- 2SA0900
- 2SA0886
- 2SA0885
- 2SA0879
- 2S99
- 2S98
- 2S97
2SA1013数据表相关新闻
2SA1012G-TO252R-R-TG_UTC代理商
2SA1012G-TO252R-R-TG_UTC代理商
2023-2-212SA1015G-TO92K-BL-TG_UTC代理商
2SA1015G-TO92K-BL-TG_UTC代理商
2023-2-162RL090M-6
商品目录 气体放电管（GDT） 直流击穿电压(最小值) - 脉冲放电电流 5kA 极间电容 1pF 电极数 2 直流击穿电压(最大值) - 精度 ±20%_ 直流击穿电压(典型值) 90V
2021-7-72RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2RP600L-8气体放电管 2RP600L-8君耀品牌 技术参数
2020-5-82SA1015-Y-AP（原厂授权中国分销商）
主要参数： 分立半导体产品 电流 - 集电极（Ic）（最大值）： 150mA 电压 - 集射极击穿（最大值）： 50V 电流（最大值） ：100nA（ICBO） DC 电流增益（hFE）（最小值）： 120 功率 - 最大值： 400MW 频率 - 跃迁： 80MHz 工作温度 ：-55°C ~ 125°C 安装类型： 通孔 封装： TO-226-3， TO-92-3
2020-3-62SA1036KT146R三极管进口原装现货
2SA1036KT146R三极管进口原装现货 启动用表面安装型三极管
2019-8-15
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