BeO FLANGED ATTENUATOR

Features: ♦ BeO Material ♦ DC - 4 GHz Performance ♦ 100 Watt Input power ♦ Flange Mount

BeO

Features: ♦ BeO Material ♦ DC - 3 GHz Performance ♦ 20 Watt Input Power ♦ Flange Mount General Description: The A0300-20-3X is a flanged 3 dB, BeO attenuator. It has an input power of 20 watts, while maintaining a constant flange temperature of 100°C. It offers a frequency range from D

BeO 3 dB FLANGED ATTENUATOR

Features: ♦ BeO Material ♦ DC - 4 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount

BeO 3 dB FLANGED ATTENUATOR

Features: ♦ BeO Material ♦ DC - 4 GHz Performance ♦ 40 Watt Input Power ♦ Flange Mount

BeO 3 dB FLANGED ATTENUATOR

Features: ♦ BeO material ♦ 50 Watt power handling ♦ DC - 3 GHz ♦ Flange mount

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

Silicon planar type

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Silicon PIN Photodiodes

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