9A , 1000V N-CHANNEL POWER MOSFET

The UTC 9N100 is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching per formance. It also can withstand high energy pulse in the avalanche and commutati • RDS(ON)=1.7 Ω @ VGS=10V \n• 100% Avalanche Tested \n• Improved dv/dt Capability;

9A, 1000V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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9A, 1000V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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9A, 1000V N-CHANNEL POWER MOSFET

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TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

POWER MOSFET 9 AMPS, 100 VOLTS

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POWER MOSFET 9 AMPS, 100 VOLTS

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Triple 3-Input NAND Gates

TTL HD74/HD74S Series

40A Single-Phase Bridge Rectifier

SINGLE-PHASE BRIDGE RECTIFIER

40 Amp Single Phase Bridge Rectifier 50 to 1000 Volts

TRIPLE 3-INPUT POSITIVE-NAND GATES

TRIPLE 3-INPUT POSITIVE-NAND GATES