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型号 功能描述 生产厂家 企业 LOGO 操作
MTD9N10E

TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery t

MOTOROLA

摩托罗拉

MTD9N10E

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

ISC

无锡固电

MTD9N10E

POWER MOSFET 9 AMPS, 100 VOLTS

文件:113.31 Kbytes Page:12 Pages

ONSEMI

安森美半导体

MTD9N10E

TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM

ETC

知名厂家

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling

VBSEMI

微碧半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件:113.31 Kbytes Page:12 Pages

ONSEMI

安森美半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件:113.31 Kbytes Page:12 Pages

ONSEMI

安森美半导体

POWER MOSFET 9 AMPS, 100 VOLTS

文件:113.31 Kbytes Page:12 Pages

ONSEMI

安森美半导体

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAG

STMICROELECTRONICS

意法半导体

MTD9N10E产品属性

  • 类型

    描述

  • 型号

    MTD9N10E

  • 制造商

    ON Semiconductor

  • 功能描述

    Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) DPAK Rail

  • 制造商

    ON Semiconductor

  • 功能描述

    MOSFET N D-PAK

更新时间:2026-5-18 12:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
MOT
24+
TO-252
5000
全新原装正品,现货销售
进口品牌
23+
SMD
15238
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
20+
TO-252
38560
原装优势主营型号-可开原型号增税票
ONSEMI/安森美
22+
TO-252
25800
原装正品支持实单
ON/安森美
23+
SOT252
8000
只做原装现货
ON/安森美
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON/安森美
23+
TO-252
50000
全新原装正品现货,支持订货
on
24+
N/A
6980
原装现货,可开13%税票
MOT
24+
TO-252
25836
新到现货,只做全新原装正品

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