Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

Electronic, 5 C #16 Str TC, PVC Ins, PVC Jkt

Product Description Electronic, 5 Conductor 16AWG (19x29) Tinned Copper, PVC Insulation, PVC Outer Jacket

LDPE Sheet Metal Plugs

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RF amplifier

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可调电容

Electronic, 5 C #16 Str TC, PVC Ins, PVC Jkt

Product Description Electronic, 5 Conductor 16AWG (19x29) Tinned Copper, PVC Insulation, PVC Outer Jacket

Electronic, 5 C #16 Str TC, PVC Ins, PVC Jkt

Product Description Electronic, 5 Conductor 16AWG (19x29) Tinned Copper, PVC Insulation, PVC Outer Jacket

Electronic, 5 C #16 Str TC, PVC Ins, PVC Jkt

Product Description Electronic, 5 Conductor 16AWG (19x29) Tinned Copper, PVC Insulation, PVC Outer Jacket

Electronic, 5 C #16 Str TC, PVC Ins, PVC Jkt

Product Description Electronic, 5 Conductor 16AWG (19x29) Tinned Copper, PVC Insulation, PVC Outer Jacket

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

包装：线轴 描述：CBL 5COND 16AWG 电缆，电线 多芯导线

包装：线轴 描述：CBL 5COND 16AWG 电缆，电线 多芯导线

Timer Interconnection System for the Automotive Industry

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Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)

Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processingof the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. • Dynamic d

3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 1.111 Ω (Typ.)

Advanced Power MOSFET

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