丝印代码：957A；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1.5 W. • Wide zener reverse voltage range 3.3V to 240V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

丝印代码：957A；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 1.5 W. ♦ Wide zener reverse voltage range 3.3V to 240V. ♦ Small plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AC/SMA ♦ Terminals: Solderable per MIL-STD-750

0.5 WATT CAPABILITY WITH PROPER HEAT SINKING

• 1N962B THRU 1N986B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/117 • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

ZENER DIODES

• 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN JAN,JANTX AND JANTXV PER MIL-PRF-19500/117 • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteritics up to 1 Amp * Spice model available