UHF wideband transistor

DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. FEATURES

RF Manual 16th edition

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise NF = 1.5 dB TYP., @VCE = 6V, IC = 30 mA, f = 1 GHz • High Gain ︱ S21e︱ 2 = 12 dB TYP. @VCE = 6V, IC = 30 mA, f = 1.0 GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for VHF, UHF low noise ampl

NPN UHF宽频带晶体管

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：RF TRANS NPN 10V 8.5GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

UHF wideband transistor

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0.5 WATT CAPABILITY WITH PROPER HEAT SINKING

• 1N962B THRU 1N986B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/117 • ZENER DIODE CHIPS • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

ZENER DIODES

• 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN JAN,JANTX AND JANTXV PER MIL-PRF-19500/117 • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteritics up to 1 Amp * Spice model available