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T-1 Bi-Pin Base (.050)

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CML

DIGITAL AUDIO MOSFET

VDS -55 V RDS(ON) typ. @ VGS = -10V 93 mΩ RDS(ON) typ. @ VGS = -4.5V 150 mΩ Qg typ. 31 nC TJ max 175 °C Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistan

IRF

DIGITAL AUDIO MOSFET

VDS -55 V RDS(ON) typ. @ VGS = -10V 93 mΩ RDS(ON) typ. @ VGS = -4.5V 150 mΩ Qg typ. 31 nC TJ max 175 °C Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistan

IRF

DIGITAL AUDIO MOSFET

文件:190.32 Kbytes Page:7 Pages

IRF

DIGITAL AUDIO MOSFET

文件:208.7 Kbytes Page:7 Pages

IRF

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