位置：首页 > IC中文资料第10513页 > 8N65
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
8N65 | 8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 |   | |
8N65 | 8A mps,650 Volts N-CHANNEL MOSFET FEATURE 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
8N65 | N-Channel 650V (D-S) Power MOSFET 文件：1.1056 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
8N65 | N-CHANNEL POWER MOSFET 文件：473.72 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | |
8N65 | isc N-Channel Mosfet Transistor 文件：96.62 Kbytes Page：2 Pages | ISC 无锡固电 | | |
8N65 | N-CHANNEL POWER MOSFET 文件：1.93438 Mbytes Page：8 Pages | SUNMATE 森美特 | | |
8N65 | 8A mps,650 Volts N-CHANNEL MOSFET 文件：194.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
8N65 | 650V N-Channel Power MOSFET 文件：2.0404 Mbytes Page：9 Pages | DYELEC 迪一电子 | | |
8N65 | 8A , 650V N-CHANNELPOWER MOSFET | UTC 友顺 | | |
丝印代码：8N650；N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
丝印代码：8N650；N-Channel Super Junction Power MOSFET II Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
丝印代码：8N650；N-Channel Super Junction Power MOSFET II Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
丝印代码：8N650；N-Channel Super Junction Power MOSFET II Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
丝印代码：8N650；N-Channel Super Junction Power MOSFET II Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
丝印代码：8N650；N-Channel Super Junction Power MOSFET II Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant | RECTRON 丽正国际 | | ||
丝印代码：8N65AT；8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
丝印代码：8N65AF；8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
丝印代码：8N65AS；8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
丝印代码：8N65AS；8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
丝印代码：8N65AMJ；8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
丝印代码：8N65AD；8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
8A mps,650 Volts N-CHANNEL MOSFET FEATURE 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
8A mps,650 Volts N-CHANNEL MOSFET FEATURE 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A mps,650 Volts N-CHANNEL MOSFET FEATURE 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET ■ DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applicat | UTC 友顺 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
8A 650V N-channel enhancement mode field effect transistor 文件：997.87 Kbytes Page：7 Pages | YFWDIODE 佑风微 | | ||
8A mps,650 Volts N-CHANNEL MOSFET 文件：194.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
8A mps,650 Volts N-CHANNEL MOSFET 文件：194.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL POWER MOSFET 文件：1.93438 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：1.93438 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10562 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
8A mps,650 Volts N-CHANNEL MOSFET 文件：194.92 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | ||
N-CHANNEL POWER MOSFET 文件：1.93438 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.43263 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
8A, 650V N-CHANNEL POWER MOSFET | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：192.55 Kbytes Page：6 Pages | UTC 友顺 | | ||
8A, 650V N-CHANNEL POWER MOSFET | UTC 友顺 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10562 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL SILICON MOSFET 文件：230.22 Kbytes Page：9 Pages | UTC 友顺 | |
8N65产品属性
- 类型
描述
- 型号
8N65
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
8A, 650V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
25+ |
TO-220F1 |
55000 |
UTC/友顺8N65KL-MTQ即刻询购立享优惠#长期有货 |
|||
HJ |
24+ |
TO220F |
158564 |
明嘉莱只做原装正品现货 |
|||
ST |
2511 |
TO220F |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
UTC |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
22+ |
TO-220220F |
20000 |
只做原装 |
||||
华晶 |
TO-220F |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VBsemi |
21+ |
TO220F |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
21+ |
TO-252 |
6856 |
百域芯优势 实单必成 可开13点增值税 |
|||
ST |
23+ |
TO220F |
16900 |
正规渠道,只有原装! |
|||
长电 |
25+23+ |
TO-220F |
23709 |
绝对原装正品全新进口深圳现货 |
8N65芯片相关品牌
8N65规格书下载地址
8N65参数引脚图相关
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8N65数据表相关新闻
8N3PF10VA-159NRGI原装价格超强
8N3PF10VA-159NRGI原装价格超强
2024-6-198N60KL-TO220F1T-TGMTQ_UTC代理商
8N60KL-TO220F1T-TGMTQ_UTC代理商
2023-3-78N80L-TO220F.4T-TG_UTC代理商
8N80L-TO220F.4T-TG_UTC代理商
2023-2-218N40KL-TO220F1T-TGMTQ_UTC代理商
8N40KL-TO220F1T-TGMTQ_UTC代理商
2023-2-138T49N286A-999NLGI
进口代理
2022-6-138SLVP1208ANBGI/W
8SLVP1208ANBGI/W 深圳市拓亿芯电子有限公司，本公司具备一般纳税人，可开16点增值税票， 货源渠道保证原厂原装正品IC，诚信为本，薄利多销。
2019-3-6
DdatasheetPDF页码索引
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