Dual N-Channel MOSFET

FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management

MOS管

System 8000 Fiber-Optic Interfacility Links

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets RO

Thermally Conductive Adhesive Transfer Tapes

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Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel 25-V (D-S) MOSFET

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N-channel power MOS field effect tube

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