丝印代码：8205S；20V NN-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Powermanagement

MOSFET

20V N-Channel Enhancement MOS FET

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MOS管

MOS管

N-channel power MOS field effect tube

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Built-in N-channel enhanced dual MOS transistor

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20.2 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER

The RF Line High Output Power Doubler 860 MHz CATV Amplifier • Specified for 77, 110 and 128–Channel Performance • Broadband Power Gain - @ f = 40–860 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transisto

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

NICAM QPSK DEMODULATOR

DESCRIPTION The TDA8205 is essentially divided into two signal processing sections. The first section handles all the NICAM signal acquisition, the QPSK demodulator and clock and data recovery circuits. The key point to note about this section is the dual frequency synthesiser. By use of only o

18W BTL x 2CH AUDIO POWER AMPLIFIER

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18W BTL x 2CH AUDIO POWER AMPLIFIER

文件：488.37 Kbytes Page：11 Pages