丝印代码：80R900P7；800V CoolMOSª P7 Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Fully optimized portfolio

丝印代码：80R900P7；800V CoolMOS짧 P7 Power Transistor

文件：940.98 Kbytes Page：13 Pages

丝印代码：80R900P7；800V CoolMOS짧 P7 Power Transistor

文件：967.7 Kbytes Page：13 Pages

丝印代码：80R900P7；800V CoolMOS짧 P7 Power Transistor

文件：962.18 Kbytes Page：13 Pages

丝印代码：80R900P7；800V CoolMOS짧 P7 Power Transistor

文件：958.17 Kbytes Page：13 Pages

丝印代码：80R900P7；800V CoolMOS짧 P7 Power Transistor

文件：1.22384 Mbytes Page：13 Pages

丝印代码：80R900PB；800V 0.9ohm N-channel MOSFET

文件：1.53439 Mbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

丝印代码：DPAK；Isc N-Channel MOSFET Transistor

文件：322.11 Kbytes Page：2 Pages

800V 0.9(ohm) N-channel MOSFET

文件：1.33521 Mbytes Page：10 Pages

800V 0.9(ohm) N-channel MOSFET

文件：1.17624 Mbytes Page：10 Pages

800V 0.9(ohm) N-channel MOSFET

文件：1.17624 Mbytes Page：10 Pages