900V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC7N90 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：210.12 Kbytes Page：5 Pages

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

7A, 900V N-CHANNEL POWER MOSFET

文件：185.44 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：224.48 Kbytes Page：7 Pages

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

HiPerFETTM Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switch

N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS= 900V • Lower RDS(ON): 1.247Ω(Typ.)