位置：首页 > IC中文资料第848页 > FQA7N90M
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQA7N90M | 900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 |   | |
FQA7N90M | 900V N-Channel MOSFET 文件：788.01 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | |
FQA7N90M | 900V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
900V N-Channel MOSFET 文件：788.01 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET 文件：788.01 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
HiPerFETTM Power MOSFETs Q-Class HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switch | IXYS 艾赛斯 | | ||
N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS= 900V • Lower RDS(ON): 1.247Ω(Typ.) | FAIRCHILD 仙童半导体 | |
FQA7N90M产品属性
- 类型
描述
- 型号
FQA7N90M
- 功能描述
MOSFET 900V Single
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-3P |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
TO-3P |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
TO-247 |
130 |
原装正品,假一罚十! |
|||
FAIRCHILD/仙童 |
01+ |
TO-247 |
44 |
||||
FAIRCHILD/仙童 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FSC |
25+23+ |
TO-247 |
29024 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD/仙童 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
FAIRCHILD |
24+ |
TO-3PN |
8866 |
||||
Fairchild/ON |
22+ |
TO3P3 SC653 |
9000 |
原厂渠道,现货配单 |
|||
FAIRC |
23+ |
TO-3P |
7300 |
专注配单,只做原装进口现货 |
FQA7N90M规格书下载地址
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FQA7N90M数据表相关新闻
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2024-8-7FQA30N40 TO-3P FAIRCHILD/仙童 MOS(场效应管) 原装正品
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA24N50
FQA24N50，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-22FQA28N50
热门搜索： 4 Channel N-Channel MOSFET , 450 V MOSFET , Si SMD/SMT N-Channel MOSFET , 100 A 250 V MOSFET , TO-264-3 MOSFET , 1.35 V MOSFET
2020-6-29FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
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