Hex Inverter

General Description The VHCU04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 3.5 ns (typ) a

Hex Inverter

文件：291.01 Kbytes Page：9 Pages

Hex Inverter

文件：222.49 Kbytes Page：9 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC INVERTER 6CH 1-INP 14TSSOP 集成电路（IC） 门和反相器

Hex Inverter

General Description The VHCU04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 3.5 ns (typ) a

HEX INVERTER SINGLE STAGE

DESCRIPTION The 74VHCU04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY:

Hex Inverter

文件：222.49 Kbytes Page：9 Pages

Hex Inverter

文件：291.01 Kbytes Page：9 Pages

Hex Inverter

General Description The VHCU04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 3.5 ns (typ) a

Hex Inverter

General Description The VHCU04 is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High Speed: tPD = 3.5 ns (typ) a

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC INVERTER 6CH 1-INP 14TSSOP 集成电路（IC） 门和反相器

HEX INVERTER SINGLE STAGE

DESCRIPTION The 74VHCU04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: