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74VHCT08A价格

参考价格:¥0.8805

型号:74VHCT08AM 品牌:Fairchild 备注:这里有74VHCT08A多少钱,2026年最近7天走势,今日出价,今日竞价,74VHCT08A批发/采购报价,74VHCT08A行情走势销售排行榜,74VHCT08A报价。
型号 功能描述 生产厂家 企业 LOGO 操作
74VHCT08A

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

74VHCT08A

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHCT08A is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPU

STMICROELECTRONICS

意法半导体

74VHCT08A

四路 2 输入 AND 门极

VHCT08A是采用硅栅极CMOS技术制造的先进的高速CMOS 2输入“与”门。 它实现了与等效双极型肖特基TTL相似的高速运行,同时保持了CMOS低功耗。 内部电路由4个级组成(包括缓冲输出),可提供高抗扰度和稳定输出。 保护电路确保不管电源电压如何,0V至7V可施加到输入引脚,输出引脚VCC = 0V。 这些电路可防止器件由于电源和输入/输出电压不匹配而受损。 此器件可用于连接5V至3V系统和两个电源系统(例如备用电池)。 •高速: TA = 25°C时,tPD = 5.0 ns(典型值)\n•高抗噪能力: VIH = 2.0V,VIL = 0.8V\n•所有输入和输出上都提供掉电保护\n•低噪声: VOLP = 0.8V(最大值)\n•低功耗: TA = 25°C时,ICC = 2 µA(最大值)\n•引脚和功能与74HCT08兼容;

ONSEMI

安森美半导体

74VHCT08A

Quad 2-Input AND Gate

文件:226.93 Kbytes Page:9 Pages

ONSEMI

安森美半导体

74VHCT08A

QUAD 2-INPUT AND GATE

文件:217.72 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

74VHCT08A

QUAD 2-INPUT AND GATE

STMICROELECTRONICS

意法半导体

丝印代码:VHCT08A;CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Quad 2-Input AND Gate General The 74VHCT08AFT is an advanced high speed CMOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipa

TOSHIBA

东芝

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHCT08A is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPU

STMICROELECTRONICS

意法半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

FAIRCHILD

仙童半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHCT08A is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPU

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

文件:217.72 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

Quad 2-Input AND Gate

文件:304.14 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

封装/外壳:14-SOIC(0.154",3.90mm 宽) 包装:卷带(TR) 描述:IC GATE AND 4CH 2-INP 14SOIC 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Quad 2-Input AND Gate

文件:226.93 Kbytes Page:9 Pages

ONSEMI

安森美半导体

QUAD 2-INPUT AND GATE

STMICROELECTRONICS

意法半导体

Quad 2-Input AND Gate

文件:304.14 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

Quad 2-Input AND Gate

文件:226.93 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:14-TSSOP(0.173",4.40mm 宽) 包装:卷带(TR) 描述:IC GATE AND 4CH 2-INP 14TSSOP 集成电路(IC) 门和反相器

ONSEMI

安森美半导体

Quad 2-Input AND Gate

文件:304.14 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

QUAD 2-INPUT AND GATE

文件:217.72 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

Quad 2-Input AND Gate

文件:226.93 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Quad 2-Input AND Gate

文件:304.14 Kbytes Page:10 Pages

FAIRCHILD

仙童半导体

QUAD 2-INPUT AND GATE

文件:217.72 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

Quad 2-Input AND Gate

The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.3 ns (Typ) at VCC = 5 V • Low Po

ONSEMI

安森美半导体

Quad 2-Input AND Gate

The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.3 ns (Typ) at VCC = 5 V • Low Po

ONSEMI

安森美半导体

Quad 2-Input AND Gate

The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.3 ns (Typ) at VCC = 5 V • Low Po

ONSEMI

安森美半导体

Quad 2-Input AND Gate

The MC74VHCT08A is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.3 ns (Typ) at VCC = 5 V • Low Po

ONSEMI

安森美半导体

74VHCT08A产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Type:

    AND

  • Channels:

    4

  • VCC Min (V):

    4.5

  • VCC Max (V):

    5.5

  • tpd Max (ns):

    5

  • IO Max (mA):

    8

  • Package Type:

    SOIC-14

更新时间:2026-7-31 15:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
19+
SOP-14
20000
12500
FAI
22+
SOP-14
1000
全新原装现货!自家库存!
FAIRCHIL
24+
SOP-14
125000
只做原装正品现货 欢迎来电查询15919825718
onsemi
26+
-
15544
全新原装正品
AMIS
2023+
TSSOP-14P
53500
正品,原装现货
FAIRCHILD/仙童
25+
TSSOP
25000
代理原装现货,假一赔十
TOSHIBA/东芝
22+
明嘉莱只做原装正品现货
2510000
TSSOP-14
onsemi
25+
原厂封装
10280
FSC
25+23+
SOP
11028
绝对原装正品全新进口深圳现货
onsemi(安森美)
25+
SOIC-14
499
全新原装

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