QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHCT08A is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPU

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

Quad 2-Input AND Gate

文件：226.93 Kbytes Page：9 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE AND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

Quad 2-input AND gate

文件：595.39 Kbytes Page：14 Pages

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

Quad 2-Input AND Gate

文件：304.14 Kbytes Page：10 Pages

Quad 2-Input AND Gate

文件：226.93 Kbytes Page：9 Pages

Quad 2-Input AND Gate

文件：304.14 Kbytes Page：10 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

QUAD 2-INPUT AND GATE

文件：217.72 Kbytes Page：11 Pages

QUAD 2-INPUT AND GATE

DESCRIPTION The 74VHCT08A is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPU

Quad 2-Input AND Gate

General Description The VHCT08A is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Features ■ High speed: tPD = 5.0ns (typ

QUAD 2-INPUT AND GATE

文件：217.72 Kbytes Page：11 Pages

Quad 2-Input AND Gate

文件：226.93 Kbytes Page：9 Pages