Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC INVERTER 6CH 1-INP 14DIP 集成电路（IC） 门和反相器

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

HEX INVERTER

DESCRIPTION The 74VHCT04A is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED:

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

HEX INVERTER

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