QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHCT03A is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPZ = 3.9 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WI

QUAD 2-INPUT OPEN DRAIN NAND GATE

文件：223.14 Kbytes Page：11 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC GATE NAND OD 4CH 2-IN 14TSSOP 集成电路（IC） 门和反相器

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHCT03A is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPZ = 3.9 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WI

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHCT03A is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPZ = 3.9 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WI

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The 74VHCT03A is an advanced high-speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPZ = 3.9 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ COMPATIBLE WI

QUAD 2-INPUT OPEN DRAIN NAND GATE

文件：223.14 Kbytes Page：11 Pages

QUAD 2-INPUT OPEN DRAIN NAND GATE

文件：223.14 Kbytes Page：11 Pages