QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I

QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I

QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC MULTIPLEXER 4 X 2:1 16SO 集成电路（IC） 信号开关，多路复用器，解码器

QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I

QUAD 2 CHANNEL MULTIPLEXER 3-STATE

DESCRIPTION The 74VHC257 is an advanced high-speed CMOS QUAD 2-CHANNEL MULTIPLEXER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C ■ HIGH NOISE I