型号 功能描述 生产厂家 企业 LOGO 操作
74V1G70C

SINGLE BUFFER

DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

STMICROELECTRONICS

意法半导体

74V1G70C

SINGLE BUFFER

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

文件:108.53 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

文件:108.53 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:5-TSSOP,SC-70-5,SOT-353 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC BUF NON-INVERT 5.5V SOT323-5 集成电路(IC) 缓冲器,驱动器,接收器,收发器

STMICROELECTRONICS

意法半导体

SINGLE BUFFER

DESCRIPTION The 74V1G70 is an advanced high-speed CMOS SINGLE BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

STMICROELECTRONICS

意法半导体

74V1G70C产品属性

  • 类型

    描述

  • 型号

    74V1G70C

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    SINGLE BUFFER

更新时间:2026-3-2 11:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
-
23+
SOT-353
50000
全新原装正品现货,支持订货
ST
25+
SOT23-5L
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
22+
SOT323-5
20000
公司只有原装 品质保证
ST
24+
SOT23-5L
2579
ST
0115+
SOT323-5
2699
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
06+
?SOT23-5L
2000
全新原装 绝对有货
ST
24+
原厂封装
65250
支持样品,原装现货,提供技术支持!
ST
22+
SOT3235
9000
原厂渠道,现货配单
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
25+
5-TSSOP SC-70-5 SOT-353
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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