SINGLE BUS BUFFER 3-STATE

DESCRIPTION The 74V1G126 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL

SINGLE BUS BUFFER 3-STATE

SINGLE BUS BUFFER 3-STATE

DESCRIPTION The 74V1G126 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL

SINGLE BUS BUFFER (3-STATE)

文件：125.6 Kbytes Page：10 Pages

SINGLE BUS BUFFER (3-STATE)

文件：125.6 Kbytes Page：10 Pages

封装/外壳：5-TSSOP，SC-70-5，SOT-353 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUF NON-INVERT 5.5V SOT323-5 集成电路（IC） 缓冲器，驱动器，接收器，收发器

SINGLE BUS BUFFER 3-STATE

DESCRIPTION The 74V1G126 is an advanced high-speed CMOS SINGLE BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL