SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT

SINGLE 2-INPUT AND GATE

DESCRIPTION The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNIT