NAND Gates

The 74HC20; 74HCT20 is a dual 4-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. • Complies with JEDEC standard JESD7A\n• Low-power dissipation\n• Input levels:• For 74HC20: CMOS level\n• For 74HCT20: TTL level\n\n• ESD protection:• HBM JESD22-A114F exceeds 2000 V\n• MM JESD22-A115-A exceeds 200 V\n\n• Multiple package options\n• Specified from -40 °C to +80 °C and from -40 °C t;

封装/外壳：14-SSOP（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 2CH 4-INP 14SSOP 集成电路（IC） 门和反相器

封装/外壳：14-SSOP（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 2CH 4-INP 14SSOP 集成电路（IC） 门和反相器

Dual 4-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT20 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT20 provide the 4-input NAND function. FEATURES • Output capability: standard • I

Dual 4-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT20 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT20 provide the 4-input NAND function. FEATURES • Output capability: standard • I

DUAL 4-INPUT NAND GATE

DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4-INPUT NAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION I

DUAL 4-INPUT NAND GATE

DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4-INPUT NAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION I

DUAL 4-INPUT NAND GATE

DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4-INPUT NAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION I