Single 2-Input NAND Gate

Features + Operation Voltage Range: 2~5.5V « Low Power Dissipation: Icc=1.0pA (Max) + High Speed: tro=4.3ns (Typ) * SOT23-5 Package Available + SOT353 Package Available « ESD Protection Exceeds JESD 22 ~2000-V Human-Body Model (A114-A) ~1000-V Charged-Device Model (C101)

2-input NAND gate

DESCRIPTION The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G00 provides the 2-input NAND function. FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds

2-input NAND gate

2-input NAND gate

1. General description The 74AHC1G00; 74AHCT1G00 is a single 2-input NAND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features and benefits • Wide supply voltage range from 2.0 to 5.5 V • Overvoltage tole

2-input NAND gate

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SINGLE 2 INPUT POSITIVE NAND GATE

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