QUAD 2-INPUT NOR GATE

DESCRIPTION The 74ACT02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS VIH =

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74ACT02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS VIH =

Quad 2-Input NOR Gate

General Description The AC02/ACT02 contains four, 2-input NOR gates. Features ■ ICC reduced by 50 on 74AC02 only ■ Outputs source/sink 24 mA ■ ACT02 has TTL-compatible inputs

Advanced CMOS TTL Input

Features Inputs directly accept TTL Outputs directly interface CMOS, NMOS and TTL Outputs Source/Sink 24 mA Low Input Current: 1μA Functionally compatible with bipolar 74LS02 Lower power alternative to bipolar logic

Quad 2-Input NOR Gate

General Description The AC02/ACT02 contains four, 2-input NOR gates. Features ■ ICC reduced by 50 on 74AC02 only ■ Outputs source/sink 24 mA ■ ACT02 has TTL-compatible inputs

Quad 2-Input NOR Gate

General Description The AC02/ACT02 contains four, 2-input NOR gates. Features ■ ICC reduced by 50 on 74AC02 only ■ Outputs source/sink 24 mA ■ ACT02 has TTL-compatible inputs

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74ACT02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS VIH =

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC GATE NOR 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT） 描述：IC GATE NOR 4CH 2-INP 14SO 集成电路（IC） 门和反相器

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74ACT02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 5ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS VIH =