74AC11价格

参考价格:¥7.9314

型号:74AC11000D 品牌:TI 备注:这里有74AC11多少钱,2025年最近7天走势,今日出价,今日竞价,74AC11批发/采购报价,74AC11行情走势销售排行榜,74AC11报价。
型号 功能描述 生产厂家 企业 LOGO 操作
74AC11

TRIPLE 3-INPUT AND GATE

DESCRIPTION The AC11 is an advanced high-speed CMOS TRIPLE 3-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL. ■ HIGH SPEED: tPD

STMICROELECTRONICS

意法半导体

74AC11

Triple 3-Input AND Gate

General Description The AC11 contains three, 3-input AND gates. Features ■ ICC reduced by 50 ■ Outputs source/sink 24mA

Fairchild

仙童半导体

74AC11

TRIPLE 3-INPUT AND GATE

STMICROELECTRONICS

意法半导体

74AC11

Triple 3-Input AND Gate

ONSEMI

安森美半导体

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-NAND GATE

FEATURES · Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise · EPIC™ (Enhanced-Performance Implanted CMOS) 1-mm Process · 500-mA Typ Latch-Up Immunity at 125°C · Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) DESC

TI

德州仪器

HEX INVERTER

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configuration Minimizes High-Speed Switching Noise EPIC ™ (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small

TI

德州仪器

HEX INVERTER

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configuration Minimizes High-Speed Switching Noise EPIC ™ (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small

TI

德州仪器

HEX INVERTER

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configuration Minimizes High-Speed Switching Noise EPIC ™ (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small

TI

德州仪器

HEX INVERTER

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configuration Minimizes High-Speed Switching Noise EPIC ™ (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small

TI

德州仪器

HEX INVERTER

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configuration Minimizes High-Speed Switching Noise EPIC ™ (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small

TI

德州仪器

HEX INVERTER

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configuration Minimizes High-Speed Switching Noise EPIC ™ (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (DW) and Shrink Small

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-AND GATE

Flow-Through Architecture Optimizes PCB Layout Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Sm

TI

德州仪器

DUAL 4 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11013 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

Philips

飞利浦

DUAL 4 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11013 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

Philips

飞利浦

DUAL 4 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11013 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

Philips

飞利浦

SIGNETICS

DESCRIPTION The 74AC/ACT11014 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

Philips

飞利浦

SIGNETICS

DESCRIPTION The 74AC/ACT11014 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

Philips

飞利浦

SIGNETICS

DESCRIPTION The 74AC/ACT11014 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

Philips

飞利浦

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

QUADRUPLE 2-INPUT POSITIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Shrink Small-Outline (DB) Packages, and Standard Plastic 300-m

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPIC (Enhanced-Performance Implanted CMOS) 1-μm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) and Thin Shrink Small-Outline (PW) Packages, and Standard Plastic 3

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE

Center-Pin VCC and GND Configurations Minimize High-Speed Switching Noise EPICE (Enhanced-Performance Implanted CMOS) 1-mm Process 500-mA Typical Latch-Up Immunity at 125°C Package Options Include Plastic Small-Outline (D) Packages and Standard Plastic 300-mil DIPs (N) description

TI

德州仪器

QUAD 2 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11132 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. The 74AC/ACT11132 provides four separate 2-input NAND gate functions which are capable of transforming slowly changing input signals into sharpl

Philips

飞利浦

QUAD 2 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11132 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. The 74AC/ACT11132 provides four separate 2-input NAND gate functions which are capable of transforming slowly changing input signals into sharpl

Philips

飞利浦

DUAL 4 INPUT MULTIPLEXER

DESCRIPTION The 74AC/ACT11153 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. FEATURES • Separate Output Enable inputs for each section • Common Select inputs • Output capability: ±24 mA • CMOS (AC) and TTL (ACT) volta

Philips

飞利浦

DUAL 4 INPUT MULTIPLEXER

DESCRIPTION The 74AC/ACT11153 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. FEATURES • Separate Output Enable inputs for each section • Common Select inputs • Output capability: ±24 mA • CMOS (AC) and TTL (ACT) volta

Philips

飞利浦

DUAL 4 INPUT MULTIPLEXER

DESCRIPTION The 74AC/ACT11153 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. FEATURES • Separate Output Enable inputs for each section • Common Select inputs • Output capability: ±24 mA • CMOS (AC) and TTL (ACT) volta

Philips

飞利浦

QUAD 2 INPUT MULTIPLEXER

DESCRIPTION The 74AC/ACT11157 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families. FEATURES • Output capability: ±24 mA • CMOS (AC) and TTL (ACT) voltage level inputs • Center-pin VCC and ground configuration to minimize hig

Philips

飞利浦

74AC11产品属性

  • 类型

    描述

  • 型号

    74AC11

  • 功能描述

    逻辑门 Quadruple 2-Input Positive-NAND gates

  • RoHS

  • 制造商

    Texas Instruments

  • 产品

    OR

  • 逻辑系列

    LVC

  • 栅极数量

    2

  • 线路数量(输入/输出)

    2/1

  • 高电平输出电流

    - 16 mA

  • 低电平输出电流

    16 mA

  • 传播延迟时间

    3.8 ns

  • 电源电压-最大

    5.5 V

  • 电源电压-最小

    1.65 V

  • 最大工作温度

    + 125 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    DCU-8

  • 封装

    Reel

更新时间:2025-10-29 18:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
0031+
SO24
340
原装现货
TI/德州仪器
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
NSC
23+
SMD-SO14
9856
原装正品,假一罚百!
TI/德州仪器
24+
SOP3.9
66
大批量供应优势库存热卖
22+
5000
TI(德州仪器)
23+
13650
公司只做原装正品,假一赔十
TEXASINSTRUM
24+
24-TSSOP
20764
只做原装正品现货 欢迎来电查询15919825718
专营TI
SMD
10512
普通
TI/德州仪器
22+
SOIC-14_150mil
500000
原装现货支持实单价优/含税
TI
23+
SOP
2503
原厂原装正品

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