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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 65A, RDS(ON) = 7.8mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 57A, RDS(ON) = 9mΩ(typ) @VGS = 10V. RDS(ON) = 16mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 65A, RDS(ON) = 7.8mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

更新时间:2025-8-11 8:02:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
VB
25+
T0-263
5405
原装正品,假一罚十!
CET/華瑞
24+
TO-263
499600
免费送样原盒原包现货一手渠道联系
CET
24+
TO263
168
VBsemi
23+
TO263
10065
原装正品,有挂有货,假一赔十
CENTRAL
24+
SOP4
18766
公司现货库存,支持实单
SR
23+
T0-263
5000
原装正品,假一罚十
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品

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