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N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=16mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,65A,RDS(ON)=7.8mΩ(typ)@VGS=10V. RDS(ON)=10mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,57A,RDS(ON)=9mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=16mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,65A,RDS(ON)=7.8mΩ(typ)@VGS=10V. RDS(ON)=10mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
更新时间:2025-8-2 12:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
2511
TO-263
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
VBsemi
23+
TO263
10065
原装正品,有挂有货,假一赔十
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
CET/華瑞
23+
TO-263
79999
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
VBSEMI/台湾微碧
23+
T0-263
50000
全新原装正品现货,支持订货
CET
23+
TO-263
7300
专注配单,只做原装进口现货
CET
23+
TO263
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO263
168
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理

73A3G芯片相关品牌

  • ADAM-TECH
  • ECS
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  • MEDER
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  • RENCO
  • SEI
  • TAI-SAW
  • ZFSWITCHES

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