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N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=16mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,65A,RDS(ON)=7.8mΩ(typ)@VGS=10V. RDS(ON)=10mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,57A,RDS(ON)=9mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=16mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,65A,RDS(ON)=7.8mΩ(typ)@VGS=10V. RDS(ON)=10mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
更新时间:2025-7-29 20:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
25+
T0-263
5405
原装正品,假一罚十!
VBsemi/台湾微碧
21+
T0-263
5006
原装现货假一赔十
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
CET/華瑞
24+
TO-263
499600
免费送样原盒原包现货一手渠道联系
VBsemi
21+
TO263
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SR
23+
T0-263
5000
原装正品,假一罚十
CET/華瑞
23+
TO-263
79999
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
23+
TO263
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO263
168
CENTRAL
24+
SOP4
18766
公司现货库存,支持实单

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