丝印代码：730A；SURFACE MOUNT ZENER DIODES

FEATURES : * Complete voltage range 3.3 to 100 volts * High peak reverse power dissipation * High reliability * Low leakage current * Standard zener voltage tolerance is ± 5%. * Pb / RoHS Free

丝印代码：730A；Complete voltage range 3.3 to 100 volts

VZ : 3.3 - 100Volts PD : 1 Watt FEATURES : * Complete voltage range 3.3 to 100 volts * High peak reverse power dissipation * High reliability * Low leakage current * Standard zener voltage tolerance is ± 5. * Pb / RoHS Free MECHANICAL DATA * Case : SMA (DO-214AC) Molded plastic * Epoxy :

丝印代码：730A；SURFACE MOUNT ZENER DIODES

FEATURES : * Complete voltage range 3.3 to 100 volts * High peak reverse power dissipation * High reliability * Low leakage current * Standard zener voltage tolerance is ± 5%. * Pb / RoHS Free

丝印代码：730A；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design.

丝印代码：730A；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 1 W. ♦ Wide zener reverse voltage range 3.3V to 330V. ♦ Small plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AC/SMA ♦ Terminals: Solderable per MIL-STD-750,

丝印代码：730A；SMA Plastic-Encapsulate ZENER Diodes

Features High forward surge capability Glass passivated junction Low Zener Impedance Power Dissipation of 1000mW. High Stabilty and High Reliability Halogen free and RoHS compliant

丝印代码：730A；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

丝印代码：730A；SURFACE MOUNT ZENER DIODE

Zener Voltage - 3.3 to 200 Volts Peak Pulse Power - 1.0 W Features ◆ For surface mounted applications in order to optimize board space ◆ Low profile package ◆ Built-in strain relief ◆ Glass passivated junction ◆ Low inductance ◆ Typical IR less than 5.0μA above 11V ◆ High temperature solde

丝印代码：730A；SMAF Plastic-Encapsulate Zener Diodes

Features Total power dissipation: 1W(Max.) Wide Zener Reverse Voltage Range 3.3V to 330V Small Plastic Package Suitable for Surface Mounted Design

丝印代码：730A；1W Silicon Planar Zener Diodes

FEATURE • Standard zener voltage tolerance is ± 5. • Voltage Range 3.3 to 100 Volts • Low zener impedance • Low regulation factor • Glass passivated junction • High reliability

丝印代码：730A；1W Silicon Planar Zener Diodes

文件：572.94 Kbytes Page：3 Pages

丝印代码：730A；Silicon Planar Zener Diodes

文件：537.48 Kbytes Page：3 Pages

丝印代码：730A；Silicon Planar Zener Diodes

文件：454.41 Kbytes Page：3 Pages

丝印代码：730A；SURFACE MOUNT ZENER DIODE

文件：971.4 Kbytes Page：3 Pages

丝印代码：730A；Small plastic package suitable for surface mounted design

文件：434.47 Kbytes Page：4 Pages

丝印代码：730A；Surface Mount Silicon Zener Diodes

文件：966.08 Kbytes Page：3 Pages

丝印代码：730A；PLASTIC-ENCAPSULATE ZENER DIODE

文件：485.54 Kbytes Page：3 Pages

丝印代码：730A；GLASS PASSIVATED JUNCTION Zener voltage regulator diodes , 1.0 Watt Steady State

文件：145.59 Kbytes Page：4 Pages

IEPE加速度传感器

730AM1-50宽频微型三轴IEPE加速度传感器是一款IEPE三轴微型加速度传感器，该型号采用剪切模式工作的压电陶瓷作为敏感元件，具有超宽频带响应特性。此IEPE加速度传感器通过结合优质的压电晶体和低噪声微电子元件产生信号，与其他敏感元件相比在工作温度范围内获得了超低温度灵敏度变化/响应，剪切模式压电技术同时保证了卓越的基座灵敏度应变误差。730AM1-50宽频微型三轴IEPE加速度传感器采用激光焊接钛合金金属外壳和玻璃密封4针轻型接头的结构（或整线输出）以供轻型、宽频带应用。出色的振幅和相位频率响应，使得此产品非常适合结构验证、零件测试、跌落测试和实验室流体动力学测试。微型立方体结构使得测 •卓越的低频响应•柔性线缆输出•粘合剂或螺柱安装•金属焊接密封•环形剪切模式•宽频带响应•可选安装隔离•飞行测试•冲击测试•路面测试•模态分析;

包装：散装 描述：CONN ADAPT UHF P/P INLINE 连接器，互连器件 同轴连接器（RF）适配器

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec