71V67903芯片数据手册瑞萨批发采购价格RENESAS-IC资料网

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型号	功能描述	生产厂家企业	LOGO
71V67903	3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM	RENESAS 瑞萨	RENESAS
71V67903S75BG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQ	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQ8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFGI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFGI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQ	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQ8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFGI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFGI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQ	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQ8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFGI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFGI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V6790375BGG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BGG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BGGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BGGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BQG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT

71V67903供应商更多...

更新时间：2025-12-26 8:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
讯运(深圳/上海)电子有限公司	71V67903S85BQI	RENESAS(瑞萨)/IDT	2021+	CABGA-165(13x15)	499		询价
深圳市诺美思科技有限公司	71V67903S80PF	IDT		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市高捷芯城科技有限公司	71V67903S85PFGI8	RENESAS(瑞萨)/IDT	24+	TQFP100(14x20)	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市斌腾达科技有限公司	71V67903S75BQGI	IDT, Integrated Device Technol	21+	165-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
深圳市冠亿通科技有限公司	71V67903S75BQI	Renesas	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
艾睿（深圳）半导体有限公司	71V67903S75BG	RENESAS(瑞萨)/IDT	2447	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市宇创芯科技有限公司	71V67903S80PFGI	RENESAS(瑞萨)/IDT	24+	TQFP-100(14x20)	16508	原装正品现货支持实单	询价
瀚佳科技(深圳)有限公司	71V67903S75BQGI	IDT, Integrated Device Technol	24+	165-CABGA(13x15)	56200	一级代理/放心采购	询价
现代芯城（深圳）科技有限公司	71V67903S85PFGI8		24+	N/A	75000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市芯为科技有限公司	71V67903S75BQGI	Renesas	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价

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716W-X2/0保证原装正品，现货价美
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https://hch01.114ic.com/
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定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4

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