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型号	功能描述	生产厂家企业	LOGO
71V67903	3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can p Fast access times 7.5ns up to 117MHz clock frequency\nLBO input selects interleaved or linear burst mode\nSelf-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)\n3.3V core power supply\nPower down controlled by ZZ input\n3.3V I/O supply (VDDQ)\nAvailabl;	RENESAS 瑞萨	RENESAS
71V67903S75BG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQ	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQ8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75BQI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFGI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S75PFGI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQ	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQ8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80BQI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFGI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S80PFGI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQ	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQ8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85BQI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFG	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFG8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFGI	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V67903S85PFGI8	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write c	RENESAS 瑞萨	RENESAS
71V6790375BGG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BGG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BGGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BGGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375BQGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790375PFGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BGGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380BQGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790380PFGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGG8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGGI	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BGGI8	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT
71V6790385BQG	3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 文件：248.93 Kbytes Page：20 Pages	IDT	IDT

71V67903供应商更多...

更新时间：2026-5-23 17:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	71V67903S75BQGI	IDT, Integrated Device Technol	24+	165-CABGA(13x15)	56200	一级代理/放心采购	询价
深圳市科恒伟业电子有限公司	71V016S15PH	IDT	2450+	TSOP44	6540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市一线半导体有限公司	71V016	IDT	24+	SOP	10		询价
深圳市冠亿通科技有限公司	71V67903S85BQI	IDT, Integrated Device Technol	24+25+		16500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市毅创腾电子科技有限公司	71V016S20PH	IDT		TSSOP	256	正品原装--自家现货-实单可谈	询价
齐创科技(上海,北京,青岛)有限公司	71V016S15PH	IDT	23+	TSOP	5000	原装正品,假一罚十	询价
艾睿（深圳）半导体有限公司	71V67903S75BG	RENESAS(瑞萨)/IDT	2447	PBGA-119(14x22)	315000	84个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市莱克讯科技有限公司	71V016SA10BFG	IDT	最新	BGA48	12600		询价
深圳市宇创芯科技有限公司	71V67903S80PFGI	RENESAS(瑞萨)/IDT	24+	TQFP-100(14x20)	16508	原装正品现货支持实单	询价
深圳市诺美思科技有限公司	71V67903S80PF	IDT		原厂封装	9800	原装进口公司现货假一赔百	询价

71V67903芯片相关品牌

71V67903规格书下载地址

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71V67903数据表相关新闻

716W-X2/0保证原装正品，现货价美
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https://hch01.114ic.com/
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定位: Top View If - 順向電流: 20 mA 封裝: Reel 品牌: Everlight 安裝風格: SMD/SMT 濕度敏感: Yes 產品類型: LED - Standard 原廠包裝數量: 3000 子類別: LEDs
2019-11-4

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