3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

◆ 256K x 16 advanced high-speed CMOS Static RAM ◆ JEDEC Center Power / GND pinout for reduced noise. ◆ Equal access and cycle times – Commercial and Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low po

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

◆ 256K x 16 advanced high-speed CMOS Static RAM ◆ JEDEC Center Power / GND pinout for reduced noise. ◆ Equal access and cycle times – Commercial and Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low po

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

◆ 256K x 16 advanced high-speed CMOS Static RAM ◆ JEDEC Center Power / GND pinout for reduced noise. ◆ Equal access and cycle times – Commercial and Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low po

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

◆ 256K x 16 advanced high-speed CMOS Static RAM ◆ JEDEC Center Power / GND pinout for reduced noise. ◆ Equal access and cycle times – Commercial and Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly LVTTL-compatible ◆ Low po

3.3V CMOS Static RAM

文件：645.53 Kbytes Page：9 Pages

3.3V CMOS Static RAM

文件：645.53 Kbytes Page：9 Pages

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：管件 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：管件 描述：IC SRAM 4MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器

3.3V CMOS Static RAM

文件：645.53 Kbytes Page：9 Pages

3.3V CMOS Static RAM

文件：645.53 Kbytes Page：9 Pages

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-