3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control si High system speed 100 MHz (7.5 ns Clock-to-Data Access)\nZBTTM Feature - No dead cycles between write and read cycles\nInternally synchronized output buffer enable eliminates the need to control OE\nSingle R/W (READ/WRITE) control pin\n4-word burst capability (Interleaved or linear)\nIndividual byte;

封装/外壳：119-BGA 包装：托盘 描述：IC SRAM 4.5MBIT PARALLEL 119PBGA 集成电路（IC） 存储器

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 4.5MBIT PAR 165CABGA 集成电路（IC） 存储器

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs

Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or

Synchronous ZBT SRAMs

文件：298.78 Kbytes Page：28 Pages

Synchronous ZBT SRAMs

文件：298.78 Kbytes Page：28 Pages