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71V256价格

参考价格:¥11.2786

型号:71V256SA10YG 品牌:IDT 备注:这里有71V256多少钱,2026年最近7天走势,今日出价,今日竞价,71V256批发/采购报价,71V256行情走势销售排行榜,71V256报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

3.3V, 32K X 8 Asynchronous Static RAM

The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry Ideal for high-performance processor secondary cache\nCommercial (0C to +70C) and Industrial (–40C to +85C) temperature range options\nFast access times: – Commercial and Industrial: 10/12/15/20ns\nLow standby current (maximum): – 2mA full standby\nInputs and outputs are LVTTL-compatible\nSingle 3.3;

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

RENESAS

瑞萨

封装/外壳:28-BSOJ(0.300",7.62mm 宽) 包装:卷带(TR) 描述:IC SRAM 256KBIT PARALLEL 28SOJ 集成电路(IC) 存储器

RENESAS

瑞萨

封装/外壳:28-BSOJ(0.300",7.62mm 宽) 包装:卷带(TR) 描述:IC SRAM 256KBIT PARALLEL 28SOJ 集成电路(IC) 存储器

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件:592.58 Kbytes Page:8 Pages

IDT

3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SB is a 262,144-bit high-speed static RAM organized as 32K x 8. The improved VIH (1.8V) makes the inputs compatible with 2.5V logic levels. The IDT71V256SB is otherwise identical to the IDT71V256SA. The IDT71V256SB has outstanding low power characteristics while at the s

IDT

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IDT

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IDT

3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SB is a 262,144-bit high-speed static RAM organized as 32K x 8. The improved VIH (1.8V) makes the inputs compatible with 2.5V logic levels. The IDT71V256SB is otherwise identical to the IDT71V256SA. The IDT71V256SB has outstanding low power characteristics while at the s

IDT

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

文件:478.03 Kbytes Page:8 Pages

IDT

71V256产品属性

  • 类型

    描述

  • Density (Kb):

    256

  • Bus Width (bits):

    8

  • Core Voltage (V):

    3.3

  • Pkg. Type:

    TSOP

  • Organization:

    32K x 8

  • I/O Voltage (V):

    3.3

  • Access Time (ns):

    12

  • Temp. Range:

    -40 to 85°C

  • Architecture:

    Asynchronous

更新时间:2026-5-23 17:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
25+
SOJ28
32360
IDT全新特价71V256SA15YG8即刻询购立享优惠#长期有货
IDT, Integrated Device Technol
24+
48-CABGA(7x7)
56200
一级代理/放心采购
IDT
2450+
TSOP44
6540
只做原装正品假一赔十为客户做到零风险!!
IDT
2025+
SOJ
5000
原装进口价格优 请找坤融电子!
IDT
28TSOP
23+
6000
专业配单原装正品假一罚十
Renesas Electronics Corporatio
24+25+
16500
全新原厂原装现货!受权代理!可送样可提供技术支持!
IDT
24+
SOP
10
IDT
25+
40
全新原装!优势库存热卖中!
IDT
TSSOP
256
正品原装--自家现货-实单可谈
IDT
23+
TSOP
5000
原装正品,假一罚十

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