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716价格
参考价格:¥48.5508
型号:716 品牌:Adafruit 备注:这里有716多少钱,2024年最近7天走势,今日出价,今日竞价,716批发/采购报价,716行情走势销售排行榜,716报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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716 | PHENOLICINSTRUMENTCASES [KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
716 | FREQUENCYRANGETO3GHz 文件:289.4 Kbytes Page:5 Pages | JAEJapan Aviation Electronics Industry, Ltd. 航空电子日本航空电子工业株式会社 | ||
716 | The0716&0718seriesfiltersprovideexcellentgeneralfilteringforWyeorDeltapowerconfigurations. 文件:38.96 Kbytes Page:1 Pages | JMKJMK Inc. JMK Inc. | ||
716 | 包装:散装 描述:BOX PLASTIC BLACK 5\ 盒子,外壳,机架 箱 | Keystone Electronics Keystone Electronics | ||
716 | 包装:盒 描述:FLUE GAS ANALYZER 测试与计量 设备 - 环境检测仪 | TPITest Products International TPI 公司TPI科技有限公司 | ||
716 | MotorterminalboardssimilartoDIN46294 文件:127.01 Kbytes Page:1 Pages | WECOWECO Electrical Connectors Inc 威科电子深圳市威科电子连接器有限公司 | ||
SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps | GILWAY Gilway Technical Lamp | |||
쩌??2&3-Cond.PhoneJack,PCBoardMount UsetomountsecurelywithPCboards. Features •Connectswithstandardcommercialphoneplugs •PCboardmountable •Stereoandmonoversions •Solderable •2and3conductorversions | POMONA Pomona Electronics | |||
SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps | GILWAY Gilway Technical Lamp | |||
SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps | GILWAY Gilway Technical Lamp | |||
SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps | GILWAY Gilway Technical Lamp | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |
716产品属性
- 类型
描述
- 型号
716
- 功能描述
罩类、盒类及壳类产品 INS CASE 4.25X5X1.75
- RoHS
否
- 制造商
Bud Industries
- 产品
Boxes
- 外部深度
6.35 mm
- 外部宽度
6.35 mm
- 外部高度
2.56 mm NEMA
- 额定值
IP
- 材料
Acrylonitrile Butadiene Styrene(ABS)
- 颜色
Red
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SUMITOMO/住友 |
21+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
TE/泰科 |
22+ |
N/A |
8465 |
代理渠道 |
|||
MOLEX |
21+ |
N/A |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
05+ |
NULL |
900 |
|||||
TE |
2348+ |
原厂封装 |
275591 |
一级代理,原装正品! |
|||
AMPHENOL-安费诺 |
24+25+/26+27+ |
车规-连接器- |
9358 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
AmericanBeauty |
新 |
5 |
全新原装 货期两周 |
||||
AMPHENOL/安费诺 |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
AMPHENOL |
22+ |
Tube |
75120 |
郑重承诺只做原装进口现货 |
|||
TE/泰科 |
21+ |
8465 |
原装工厂现货 |
716规格书下载地址
716参数引脚图相关
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- 7805
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- 7705ac
- 74ls48
- 74ls373
- 74ls244
- 74ls192
- 74ls164
- 74ls138
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- 74hc244
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- 722114299
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- 72045600
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- 717126-505
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- 716TX
- 716M12
- 716LP3E
- 716FX2
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- 7161(WURLITZER)
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- 7130A
- 710CE
- 70BIZ
- 70B1C
- 709CE
- 70622(RCA)
- 7044260991
- 703639-2
- 703639-1
- 70270740
- 70177B02
- 70177A07
- 70177A02
- 70177A01
- 7012167-02
- 7012166
- 7012142-03
- 7012133-02
716数据表相关新闻
715P47354LD3
715P47354LD3
2023-4-21715P22354KD3
715P22354KD3
2023-4-217211MD9AV2BE
7211MD9AV2BE
2022-12-287165-0796新到货只做原装,诚信为本!
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
2022-8-12719502C-2PT
https://hch01.114ic.com/
2020-11-137116-1546-02优势订货,全新原装
7116-1546-02 优势订货,全新原装
2020-9-2
DdatasheetPDF页码索引
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