716价格

参考价格:¥48.5508

型号:716 品牌:Adafruit 备注:这里有716多少钱,2024年最近7天走势,今日出价,今日竞价,716批发/采购报价,716行情走势销售排行榜,716报价。
型号 功能描述 生产厂家&企业 LOGO 操作
716

PHENOLICINSTRUMENTCASES

[KEYSTONE] PHENOLICINSTRUMENTCASES •ChoiceofSizes •Sturdyconstruction •Flushmountingpanels •Casesandpanelsaresoldseparately •CoversavailableinPhenolicorAluminum •Coverscanbemachinedtoacceptdials,switches,displays •Panelmountingscrewsavailable

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
716

FREQUENCYRANGETO3GHz

文件:289.4 Kbytes Page:5 Pages

JAEJapan Aviation Electronics Industry, Ltd.

航空电子日本航空电子工业株式会社

JAE
716

The0716&0718seriesfiltersprovideexcellentgeneralfilteringforWyeorDeltapowerconfigurations.

文件:38.96 Kbytes Page:1 Pages

JMKJMK Inc.

JMK Inc.

JMK
716

包装:散装 描述:BOX PLASTIC BLACK 5\ 盒子,外壳,机架 箱

Keystone Electronics

Keystone Electronics

Keystone Electronics
716

包装:盒 描述:FLUE GAS ANALYZER 测试与计量 设备 - 环境检测仪

TPITest Products International

TPI 公司TPI科技有限公司

TPI
716

MotorterminalboardssimilartoDIN46294

文件:127.01 Kbytes Page:1 Pages

WECOWECO Electrical Connectors Inc

威科电子深圳市威科电子连接器有限公司

WECO

SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps

SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps

GILWAY

Gilway Technical Lamp

GILWAY

쩌??2&3-Cond.PhoneJack,PCBoardMount

UsetomountsecurelywithPCboards. Features •Connectswithstandardcommercialphoneplugs •PCboardmountable •Stereoandmonoversions •Solderable •2and3conductorversions

POMONA

Pomona Electronics

POMONA

SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps

SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps

GILWAY

Gilway Technical Lamp

GILWAY

SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps

SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps

GILWAY

Gilway Technical Lamp

GILWAY

SubmicroAxialLeadLamp,MicroAxialLeadLamps,AxialLeadLamps

SubmicroAxialLeadLamp MicroAxialLeadLamps AxialLeadLamps

GILWAY

Gilway Technical Lamp

GILWAY

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

716产品属性

  • 类型

    描述

  • 型号

    716

  • 功能描述

    罩类、盒类及壳类产品 INS CASE 4.25X5X1.75

  • RoHS

  • 制造商

    Bud Industries

  • 产品

    Boxes

  • 外部深度

    6.35 mm

  • 外部宽度

    6.35 mm

  • 外部高度

    2.56 mm NEMA

  • 额定值

    IP

  • 材料

    Acrylonitrile Butadiene Styrene(ABS)

  • 颜色

    Red

更新时间:2024-4-27 20:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUMITOMO/住友
21+
SMD
518000
明嘉莱只做原装正品现货
TE/泰科
22+
N/A
8465
代理渠道
MOLEX
21+
N/A
9800
只做原装正品假一赔十!正规渠道订货!
05+
NULL
900
TE
2348+
原厂封装
275591
一级代理,原装正品!
AMPHENOL-安费诺
24+25+/26+27+
车规-连接器-
9358
一一有问必回一特殊渠道一有长期订货一备货HK仓库
AmericanBeauty
5
全新原装 货期两周
AMPHENOL/安费诺
2046+
9852
只做原装正品现货!或订货假一赔十!
AMPHENOL
22+
Tube
75120
郑重承诺只做原装进口现货
TE/泰科
21+
8465
原装工厂现货

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