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参考价格：￥48.5508

型号：716 品牌：Adafruit 备注：这里有716多少钱，2025年最近7天走势，今日出价，今日竞价，716批发/采购报价，716行情走势销售排行榜，716报价。

型号	功能描述	生产厂家&企业	LOGO
716	PHENOLIC INSTRUMENT CASES [KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
716	FREQUENCY RANGE TO 3GHz 文件：289.4 Kbytes Page：5 Pages	JAEJapan Aviation Electronics Industry, Ltd. 航空电子日本航空电子工业株式会社	JAE
716	The 0716 & 0718 series filters provide excellent general filtering for Wye or Delta power configurations. 文件：38.96 Kbytes Page：1 Pages	JMK JMK Inc.	JMK
716	包装：散装描述：BOX PLASTIC BLACK 5\ 盒子，外壳，机架箱	KEYSTONE Keystone Electronics Corp.	KEYSTONE
716	包装：盒描述：FLUE GAS ANALYZER 测试与计量设备 - 环境检测仪	TPI	TPI
716	Motor terminal boards similar to DIN 46294 文件：127.01 Kbytes Page：1 Pages	WECO	WECO
7160	쩌??2 & 3-Cond. Phone Jack, PC Board Mount Use to mount securely with PC boards. Features • Connects with standard commercial phone plugs • PC board mountable • Stereo and mono versions • Solderable • 2 and 3 conductor versions	POMONA Pomona Electronics	POMONA
7160	Submicro Axial Lead Lamp,Micro Axial Lead Lamps,Axial Lead Lamps Submicro Axial Lead Lamp Micro Axial Lead Lamps Axial Lead Lamps	GILWAY	GILWAY
7161	Submicro Axial Lead Lamp,Micro Axial Lead Lamps,Axial Lead Lamps Submicro Axial Lead Lamp Micro Axial Lead Lamps Axial Lead Lamps	GILWAY	GILWAY
7161	PCI 16-Port RS-232 Serial Interface Features • 16C854 buffered UARTs with 128-byte FIFOs • Data rates to 460.8K bps • Universal Bus (3.3V and 5V) compatible • All modem control signals implemented • Two 36 inch cables terminate to sixteen DB-25M connectors	SEALEVEL	SEALEVEL
7161E	PCI Express 16-Port RS-232 Serial Interface Features • Compliant with RoHS and WEEE directives • 16C854 buffered UARTs with 128-byte FIFOs • Data rates to 460.8K bps • PCI Express X1 compliant • All modem control signals implemented • Included, two 36 inch cables terminate to sixteen DB-25M connectors (Item# CA202)	SEALEVEL	SEALEVEL
7162	Submicro Axial Lead Lamp,Micro Axial Lead Lamps,Axial Lead Lamps Submicro Axial Lead Lamp Micro Axial Lead Lamps Axial Lead Lamps	GILWAY	GILWAY
7163	Submicro Axial Lead Lamp,Micro Axial Lead Lamps,Axial Lead Lamps Submicro Axial Lead Lamp Micro Axial Lead Lamps Axial Lead Lamps	GILWAY	GILWAY
7164L	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L100DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L20YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L25YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L35DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L35TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L45DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L45TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L55DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L55TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L70DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L70TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L85DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164L85TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S100DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20TPG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20TPGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S20YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25TPG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YG	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YG8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YGI	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S25YGI8	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S35DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S35TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S45DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S45TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S55DB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS
7164S55TDB	CMOS Static RAM 64K (8K x 8-Bit) Features ◆ High-speed address/chip select access time – Commercial: 20/25ns (max.) – Industrial: 20/25ns (max.) – Military: 20/25/35/45/55/70/85/100ns (max.) ◆ Low power consumption ◆ Battery backup operation – 2V data retention voltage (L Version only) ◆ Produced with advanced CMOS high-p	RENESAS 瑞萨	RENESAS

716产品属性

类型
描述
型号
716
功能描述
罩类、盒类及壳类产品 INS CASE 4.25X5X1.75
RoHS
否
制造商
Bud Industries
产品
Boxes
外部深度
6.35 mm
外部宽度
6.35 mm
外部高度
2.56 mm NEMA
额定值
IP
材料
Acrylonitrile Butadiene Styrene(ABS)
颜色
Red

716供应商更多...

更新时间：2025-8-11 19:14:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	7164L85TDB	IDT	2023+	DIP	50000	原装现货	询价
深圳市纳立科技有限公司	71600-126LF		三年内		1983	只做原装正品	询价
深圳市星辰微电科技有限公司	7160-9465	TE Connectivity(泰科电子)	24+	conn	782	TE Connectivity(泰科电子)现货销售期货订购	询价
深圳市华睿芯科技有限公司	7164S20TP	IDT	24+	DIP28	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市联世界科技有限公司	71656810	FCI	24+/25+		300	原装正品现货库存价优	询价
深圳市威雅利发展有限公司	7166-LFREVA	TRIDENT	07+	BGA	550	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市福田区绿盛电子商行	7164S20TPG	IDT	2018+		26976	代理原装现货/特价热卖!	询价
深圳市科恒伟业电子有限公司	716612050	MOLEX	23+	N/A	6850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市创新迹电子有限公司	71661-2540	Molex	2023+	N	8700	原装现货	询价
上海鑫癸子电子科技有限公司	7165-0076	SUM	22+		46398		询价

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7165-0796新到货只做原装，诚信为本！
16-02-0069 87439-0300 644752-5 9-1393222-1 281839-3 16-02-0115 0527451497 1379118-1 50-36-1678 189727-1 1-1102296-1 51191-0600 640250-4 171814-1009 15-24-6180 6-103672-9 345259-1 35507-0500 15-24-9144 15-24-9164 1-350944-0 794824-1 46114-1016 770586-1 502
2022-8-12
719502C-2PT
https://hch01.114ic.com/
2020-11-13
7116-1546-02优势订货，全新原装
7116-1546-02 优势订货，全新原装
2020-9-2

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7116-1546-02优势订货，全新原装

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