型号 功能描述 生产厂家&企业 LOGO 操作

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

AvalancheEnergySpecified

DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage-:VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=1.2Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

6.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandis designedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandhaveahigh ruggedavalanchecharacteristics.ThispowerMOSFETisusually usedathighspeedswitchingapplicati

SYC

SYC Electronica

SYC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士电机富士电机株式会社

Fuji

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-channel600V,1.00typ.,5.5AMDmeshM2PowerMOSFETinanSOT223-2package

Features •Extremelylowgatecharge •Excellentoutputcapacitance(Coss)profile •100%avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thede

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

6.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N60ZisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N60ZisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N60ZisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC6N65isahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitchingp

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2Amps,600/650VoltsN-CHANNELMOSFET

文件:249.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6Amps,600VoltsN-CHANNELMOSFET

文件:193.16 Kbytes Page:2 Pages

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

6.2A,600VN-CHANNELPOWERMOSFET

文件:254.42 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:2.10805 Mbytes Page:7 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-CHANNELMOSFET

文件:219.8 Kbytes Page:6 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

N-ChannelPowerMOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

N-Channel600V(D-S)PowerMOSFET

文件:1.0803 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNELPOWERMOSFET

文件:460.3 Kbytes Page:6 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC

600VN-ChannelPowerMOSFET

文件:1.88521 Mbytes Page:8 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

6.2Amps,600/650VoltsN-CHANNELMOSFET

文件:249.26 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,600VN-CHANNELPOWERMOSFET

文件:254.42 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6A600VN-channelenhancedfieldeffecttransistor

文件:1.12341 Mbytes Page:7 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

N-ChannelPowerMOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

N-ChannelPowerMOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

N-CHANNELMOSFET

文件:219.8 Kbytes Page:6 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

6Amps,600VoltsN-CHANNELMOSFET

文件:193.16 Kbytes Page:2 Pages

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

N-CHANNELMOSFET

文件:219.8 Kbytes Page:6 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

N-CHANNELPOWERMOSFET

文件:225.14 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6Amps,600VoltsN-CHANNELMOSFET

文件:193.16 Kbytes Page:2 Pages

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

N-CHANNELPOWERMOSFET

文件:2.10805 Mbytes Page:7 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-ChannelPowerMOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

N-CHANNELPOWERMOSFET

文件:2.10805 Mbytes Page:7 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-ChannelPowerMOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI

6.2A,600VN-CHANNELPOWERMOSFET

文件:254.42 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:264.93 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:225.14 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,600VN-CHANNELPOWERMOSFET

文件:254.42 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:264.93 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6.2A,600VN-CHANNELPOWERMOSFET

文件:254.42 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

文件:264.93 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

6N6产品属性

  • 类型

    描述

  • 型号

    6N6

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

更新时间:2025-8-2 17:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SILAN/士兰微
22+
TO-220F-3L;TO-252-2L
150000
挂的就有,常备现货
REASUNOS
1948+
TO-252
18562
只做原装正品现货!或订货假一赔十!
TO-220F
23+
NA
15659
振宏微专业只做正品,假一罚百!
F
25+
TOP220
4500
全新原装、诚信经营、公司现货销售
华晶
TO-220F
50000
一级代理 原装正品假一罚十价格优势长期供货
INMET
2023+
N(M/F)
25
weinschel 衰减器库存大量现货,欢迎电寻
FAIFCHILD
24+
TO-220
90000
一级代理商进口原装现货、价格合理
AAT/FSC
18+
TO-220F
5000
电解电容绝对现货库存,样品可出,量大价优
CDT
18+
TO-220F
85600
保证进口原装可开17%增值税发票
UTC/友顺
22+
TO-220
25000
只有原装原装,支持BOM配单

6N6芯片相关品牌

  • ADAM-TECH
  • ECS
  • EDAC
  • grayhill
  • Intel
  • KODENSHI
  • MEDER
  • MPD
  • RENCO
  • SEI
  • TAI-SAW
  • ZFSWITCHES

6N6数据表相关新闻