包装：散装 描述：CASE PLASTIC BLACK 盒子，外壳，机架 箱

包装：散装 描述：CASE PLASTIC BLACK 盒子，外壳，机架 箱

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=30A@ TC=25℃ ·Drain Source Voltage : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =7.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-channel Advanced Mode Power MOSFET

Features  VDS= 40V, ID= 150A RDS(ON)

Energy Efficient, High-Power Off-Line Switcher with Accurate Primary-Side Regulation (PSR)

Extensive Protection Features • Auto-restart limits power delivery to 3% during overload faults • Output short-circuit protection (SCP) • Output overload/over-current protection (OPP, OCP) • Optional extended shutdown delay time • Output overvoltage protection (OVP), auto-restart or latch

Energy Efficient, High-Power Off-Line Switcher with Accurate Primary-Side Regulation (PSR)

Extensive Protection Features • Auto-restart limits power delivery to 3% during overload faults • Output short-circuit protection (SCP) • Output overload/over-current protection (OPP, OCP) • Optional extended shutdown delay time • Output overvoltage protection (OVP), auto-restart or latch

N-Channel PowerTrench짰 MOSFET 25 V, 7.5 m廓

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