扬声器

包装：散装 描述：HEX KEY L SHAPE 4MM 5.43\ 工具 六角，螺丝刀

Metric Ball End Hex Keys Chrome Finish

文件：269.4 Kbytes Page：1 Pages

包装：散装 描述：LINER 24\ 胶带，粘合剂，材料 胶带

PV® 压接

Metric Ball End Hex Keys Chrome Finish

文件：269.4 Kbytes Page：1 Pages

System DC Power Supply

文件：318.82 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=54A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 54 A, 3

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features ● 12 A, 30