丝印代码：6617；Enhancement Mode Power MOSFET

DESCRIPTION The F6617SPK uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated

Proton Radiation Tolerant, Quad Channel, Hermetic 20 Pin LCC, Optically Coupled Isolator

The 66171 is an optically coupled isolator, consisting of four Red 660nm LEDs and four silicon phototransistors mounted and coupled in a miniature surface mount hermetic leadless chip carrier. The 66171 uses an LED proven to be more tolerant to proton radiation. All electrical characteristics of eac • High Reliability \n• Base lead provided for conventional transistor biasing \n• Very high gain, high voltage transistor \n• Stability over wide temperature range. \n• +1kVdc electrical isolation \n• Screening available ;

Proton Radiation Tolerant, Quad Channel, Hermetic 20 Pin LCC, Optically Coupled Isolator

The 66171 is an optically coupled isolator, consisting of four Red 660nm LEDs and four silicon phototransistors mounted and coupled in a miniature surface mount hermetic leadless chip carrier. The 66171 uses an LED proven to be more tolerant to proton radiation. All electrical characteristics of eac • High Reliability \n• Base lead provided for conventional transistor biasing \n• Very high gain, high voltage transistor \n• Stability over wide temperature range. \n• +1kVdc electrical isolation \n• Screening available \n;

1500 Vdc isolation test voltage

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Base lead provided for conventional transistor biasing

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包装：散装 描述：TABLE RUNNER VINYL GRN 50'X2' 静电控制，防静电，ESD，无尘室产品 静电控制接地垫，防静电垫

Base lead provided for conventional transistor biasing

包装：散装 描述：TABLE RUNNER VINYL GRN 50'X2.5' 静电控制，防静电，ESD，无尘室产品 静电控制接地垫，防静电垫

TTL compatible input and output

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Base lead provided for conventional transistor biasing

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GULL WING HERMETICALLY SEALED, SINGLE CHANNEL OPTOCOUPLER

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Linearity Coils

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Linearity Coils

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2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features • Low Power Standby and

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

HEXFET Power MOSFET

Description The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

Ultra Low Power Microcontroller with ADC AND EEPROM

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