Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

Ultra Low Power Microcontroller with ADC AND EEPROM

Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

Ultra Low Power Microcontroller with ADC AND EEPROM

文件：694.91 Kbytes Page：65 Pages

2K x 8 CMOS PROM

Description The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K word by 8-bit/word format with “Three-State” outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. Features • Low Power Standby and

Radiation Hardened 2K x 8 CMOS PROM

Radiation Hardened 2K x 8 CMOS PROM The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM, organized in a 2K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process, and is designed to be functionally equivalent to the HM-6617. Synchronous circuit design tech

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of

HEXFET Power MOSFET

Description The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout