N-Channel Enhancement Mode Power MOSFET

Description The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Low Frequencies

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COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

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Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive