封装/外壳：24-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC SRAM 16KBIT PARALLEL 24DIP 集成电路（IC） 存储器

封装/外壳：24-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC SRAM 16KBIT PARALLEL 24DIP 集成电路（IC） 存储器

High-speed access and chip select times

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CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc